Micron Launches 176 Layer NAND Flash and 1 alpha DRAM Chips for Data Saving


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Micron Technology has unveiled new memory and storage products that it believes could better serve data-driven businesses as the data economy continues to grow.

New flash memory and dynamic random access memory (DRAM) chips were designed to address the bottleneck in feeding data between memory, storage and processing solutions in modern computers. Micron made the announcement at the Computex Virtual Fair in Taiwan this week.

New products include its first 176-layer NAND flash and DRAM 1α technology, as well as what Micron introduced as the industry’s first universal flash storage (UFS) 3.1 solution for automotive applications. The products will be used for everything from businesses to games.

The new additions to the portfolio respond to the company’s vision to accelerate data-driven insight through memory and storage innovations that enable new capabilities from the data center to the smart edge, said Sumit Sadana, Micron’s commercial director, during a press briefing. He noted that the semiconductor industry is generally growing faster than the global economy as a whole, and the demand for memory and flash is growing faster than the semiconductor industry. About 30% of the chip industry is memory and storage.

“It is [going to be used] in endpoints, be it mobile phones and laptops, in data center technologies, in the smart edge like the Industrial Internet of Things and smart automobiles, ”Sadana said. “Every segment of the market will be supercharged over the next ten or two years. These are some really exciting trends that bode well for the future.

Micron has announced volume delivery of its first PCIe Gen4 SSDs built with what the company has called the world’s first 176-layer NAND. This month, the company is also offering what it calls another world first, a node-based LPDDR4x 1α DRAM. LPDDR4x is the latest JEDEC specification for fourth generation low power DRAM, with improved input / output voltage for significantly lower power, making it ideal for mobile computing devices. Together, Micron said, these latest releases reinforce the company’s leadership position in DRAM and NAND technologies, which it claimed to establish this year. PCIe Gen4 SSDs are expected to grow six times over the next two years, according to the Forward Insights market research.

Above: Micron 3400 M2 SSD module.

Image Credit: Micron

These advances will help the data economy cope with the explosion of data from AI and 5G. As these technologies reach general deployment, they generate huge amounts of data that memory and storage products must keep up with.

The company’s latest SSDs, the Micron 3400 and 2450, deliver high performance and design flexibility with low power consumption to enable all-day use from business workstations to ultra-thin laptops, Micron said. . The Micron 3400 SSD delivers twice the read throughput and up to 85% higher write throughput than previous generations, the company said, enabling demanding applications such as real-time 3D rendering, design computer aided games and animation.

For customers looking for lower-cost PCIe Gen4 performance, the Micron 2450 SSD is available in three form factors, as small as 22x30mm M.2, to provide immense design flexibility. Intel and Advanced Micro Devices have both validated the technology for use with their processors. The PC market now produces one million computers per day, Jeremy Werner, vice president of storage at Micron, said at a press briefing. Market research IDC expects the PC market to grow 18% in 2021, after growing 13% in 2020.

Werner said the SSD products are not vaporware, as they ship today. Micron is delivering LPDDR4x by volume on its first 1α node this month, following on from its first 1α node DRAM products in January 2021. The company also announced that it has completed validation of its 1α-based DDR4 on major platforms. forms of data centers, including the 3rd generation. AMD EPYC. Both are in series production at Micron’s advanced DRAM manufacturing facilities in Taiwan, including its new A3 facility in Taichung.

Above: Micron DDR5 DRAM chips.

Image Credit: Micron

Raj Hazra, senior vice president of compute and networking at Micron, told a news briefing that Micron 1α-based memory provides cutting-edge technology to fuel innovation, workloads centric. data on consumer server platforms to thin laptops. The 1-alpha design helps improve memory energy efficiency, extending laptop battery life for home work and home study environments. Micron has partnered with Taiwanese OEM Acer to integrate 1α-based LPDDR4x and DDR4 into Acer systems.

The 1α node process offers a 40% improvement in memory density and up to 15% power savings for mobile use cases compared to the previous LPDDR4x node 1z, Hazra said. This power saving is ideal for mobile phones that need to conserve battery life, he said, especially in memory-intensive use cases like capturing photos and videos.

For data-intensive automotive systems, Micron has announced that it is sampling 128GB and 256GB densities of its 96-layer NAND as part of its new UFS 3.1 Managed NAND product portfolio for automotive applications. The ruggedized solutions can be used for in-car entertainment and advanced driver assistance systems (ADAS) at the smart edge. ADAS vehicles now have over 100 million lines of software code that must be stored and read quickly for a fast user experience.

The company said UFS 3.1 provides 50% faster sustained write performance to keep pace with growing sensor and camera data real-time local storage needs for ADAS Layer 3+ systems and applications. Black Box.

Micron also said that its DDR5 technology activation program has now engaged more than 250 technical and design leaders from more than 100 industry leaders, including silicon and systems activators, channel partners, cloud service providers and OEMs.


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